In this section, it lists referenced area statistics while adding MBIST into design.
Design architecture:
Memory: Single-port SRAM *20 and ROM *1
Process: TSMC 55nm
Library: sc9_cln55lp_base_rvt_ss_typical_max_1p08v_125c
NAND Gate area:1.44 um2
Default BFL settings: (default.bfl)
Synthetic area of default.bfl (Unit:um2): Following area information are based on default.bfl.
Following table show the area rate variation while setting change.
Following table shows the area rate variation while selecting different interface.
Following table shows the area rate variation while using different algorithm and algorithm_selection setting.
Following table shows the area rate variation while selecting different background testing pattern and its data inverse setting.
Following table shows the area rate variation in several different bypass settings.
Diagnosis can assist user to analysis the memory errors. Following table shows the area rate variation in several different diagnosis settings.
In default BFL setting, it includes one controller, two sequencers and two groups. Following table shows the rate variation while grouping setting change.